ZeptoBars - RSS feed http://zeptobars.ru/en/ Microelectronics. Die-shots. Artificial intelligence. Lasers. en-us Tue, 10 Jun 2006 04:00:00 GMT Fri, 19 Dec 14 00:34:38 +0300 webmaster@zeptobars.ru 120 10 <![CDATA[Torex XC6206 - CMOS LDO : weekend die-shot]]> http://zeptobars.ru/en/read/torex-XC6206-ldo-cmos older bipolar ones, which were magnitude larger. 250mA LDO in SOT-23 might be hard to believe at first.

Datasheet mentions "laser trimming" but we see voltage set via mask and 2 fuses for fine tuning. It is possible though that they have common values set in mask (like this 3.3V one) , and rare voltages laser trimmed.

Die size 500x356 µm, 500nm technology.



Etching off metals:



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Mon, 17 Nov 14 07:49:41 +0300
<![CDATA[DIP 10Mhz Quartz oscillator based on Seiko NPC HA5022A3 : weekend die-shot]]> http://zeptobars.ru/en/read/Seiko-NPC-HA5022A3-quartz-oscillator-dip Die size 976x770 µm.

Quartz crystal is mounted on springs - in order to reduce impact of vibration on oscillation stability and to make it's damage less likely:


There is an oscillator IC soldered on the ceramic PCB, as well as 0.01uF power supply decoupling cap. It seems we need to go deeper:

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Mon, 10 Nov 14 05:32:28 +0300
<![CDATA[NXP PMST3904 - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/NXP-PMST3904-NPN-BJT

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Tue, 04 Nov 14 13:27:47 +0300
<![CDATA[BFR93 - BJT RF transistor : weekend die-shot]]> http://zeptobars.ru/en/read/BFR93-bjt-bipolar-RF-npn-transistor Die size 265x264 µm. Transistor itself occupy only small part of the die - it is impractical to cut smaller die, it is already almost a silicon cube:



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Sat, 01 Nov 14 01:06:50 +0300
<![CDATA[10Mhz Quartz SMD oscillator based on Seiko NPC SM5009 : weekend die-shot]]> http://zeptobars.ru/en/read/active-smd-10mhz-seiko-npc-SM5009-CF5009AL2-CETECJ
Die size 1194x897 µm, 800nm technology.




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Mon, 27 Oct 14 07:59:34 +0300
<![CDATA[OnSemi MMBT2222A - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/OnSemi-MMBT2222A-MMBT2222AL1G-npn-bjt-transistor

Die size 343x343 µm. Comparing to NXP BC847B die area is 1.5x larger (0.118 vs 0.076mm²), but maximum continuous collector current is 6 times higher (600mA vs 100mA, SOT-23 in both cases). This huge increase in current per transistor area is achieved by shunting thin (=high-resistance) base layer with metal. High resistance of base layer is the limiting factor for maximum collector current in BC847B.]]>
Mon, 20 Oct 14 16:42:31 +0400
<![CDATA[NXP 2N7002 N-channel MOSFET : weekend die-shot]]> http://zeptobars.ru/en/read/NXP-2N7002-TrenchMOS-N-Channel-MOSFET
Die size 377x377 µm.

Hexagonal cells of TrenchMOS transistor has 4µm size.
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Mon, 20 Oct 14 10:01:37 +0400
<![CDATA[Espressif ESP8266 WiFi-serial interface : weekend die-shot]]> http://zeptobars.ru/en/read/Espressif-ESP8266-wifi-serial-rs232-ESP8089-IoT sold for less than 4$. Chinese company Espressif managed to cram entire WiFi, TCP/IP and HTTP stack into on-chip memory, without external DRAM. Analog front-end requires minimal external components, all filters are internal. All this allowed them to offer extremely aggressive price. Chip has marking ESP8089, which is their more advanced 40nm product. Apparently, they only differ in bonding and ROM content.

Die size 2050x2169 µm, half of which is occupied by transceiver and PA, 25% - on-chip memory (rough size estimations are ~300KiB), and the rest is Xtensa LX106 CPU core and other digital logic.





Chinese engineers did an outstanding job here on finally making WiFi IoT devices cost effective. Let's hope Espressif will eventually open more internal chip information for amateurs and end users. ]]>
Mon, 20 Oct 14 00:32:03 +0400
<![CDATA[Analog Devices AD558 - MIL-Spec 8-bit I²L DAC : weekend die-shot]]> http://zeptobars.ru/en/read/ad558-8bit-dac-laser-trim-analog-devices-cold-war I²L DAC in ceramic package (MIL spec).

It is still an open question how this chip got into ex-USSR/Russia - anonymous reader left no comments on that (this smells like cold war...). It is not a secret that Russia had no extensive civilian IC assortment in manufacturing, hence all military IC's must have been designed and manufactured from scratch (i.e. all R&D, prototypes and masks must be paid by government). In such conditions providing all variety of domestic ICs is economically impossible, at least without government expenses comparable to whole world's expenses on IC R&D. So "temporary", "case-by-case" permit to use imported (both legitimately and not-so-legitimately) western ICs in military equipment "until domestic products are ready" is still here after 24 years despite numerous attempts to end this practice.

Die size 2713x2141 µm, 6µm manufacturing technology, trimming laser was leaving ~8µm diameter spots.


Oh, these rounded resistors are just beautiful... Autorouters in 2014, do you see this?
Note how amount of laser trimming on R-ladder is different for different bits.



PS. Could anyone share position of western engineers on plastic-vs-ceramic package for military/space-grade IC's? It appears modern plastic packages offer more benefits (like better G-shock/vibration reliability and obviously cost) without sacrificing anything (temperature range and moisture are less of a concern now, radiation was never a concern for a package).]]>
Tue, 07 Oct 14 01:52:09 +0400
<![CDATA[74HC4094 - 8-bit shift register : weekend die-shot]]> http://zeptobars.ru/en/read/74HC4094-8bit-shift-register

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Sun, 07 Sep 14 01:43:17 +0400