ZeptoBars - RSS feed http://zeptobars.ru/en/ Microelectronics. Die-shots. Artificial intelligence. Lasers. en-us Tue, 10 Jun 2006 04:00:00 GMT Mon, 02 Feb 15 04:42:20 +0300 webmaster@zeptobars.ru 120 10 <![CDATA[MC34063 : Weekend die-shot]]> http://zeptobars.ru/en/read/MC34063

Update 23.01.2015: We've returned to this chip while testing new optical and etching setup. Here is it again with metalization stripped. Original article was published 25.11.2012.

Fri, 23 Jan 15 18:12:33 +0300
<![CDATA[Noname MMBT3904 - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/Noname-MMBT3904-lift-off-metallization NXP PMST3904, but topology is clearly redrawn. Notice sketchy borders of metalization - apparently they were using lift-off process for metalization instead of plasma etching. But for discrete transistors this might still be acceptable for good yield.

Die size 290x291 µm, which is slightly larger than NXP's one.

Thu, 08 Jan 15 18:12:28 +0300
<![CDATA[NXP MMBT3904 - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/NXP-MMBT3904-npn-bjt

Thu, 08 Jan 15 04:49:07 +0300
<![CDATA[KR1818VG93 - FDD controller : weekend die-shot]]> http://zeptobars.ru/en/read/kr1818vg93-fdd-controller-FDC1793-02 started yet another reverse engineering project of KR1818VG93 - FDD controller manufactured in USSR times. Presumably it has some compatibility/similarity with FDC1793-02 - this will be figured out.

Die size 4817x4794 µm, 6µm NMOS technology.

After stripping metal:

Sun, 21 Dec 14 12:07:13 +0300
<![CDATA[Torex XC6206 - CMOS LDO : weekend die-shot]]> http://zeptobars.ru/en/read/torex-XC6206-ldo-cmos older bipolar ones, which were magnitude larger. 250mA LDO in SOT-23 might be hard to believe at first.

Datasheet mentions "laser trimming" but we see voltage set via mask and 2 fuses for fine tuning. It is possible though that they have common values set in mask (like this 3.3V one) , and rare voltages laser trimmed.

Die size 500x356 µm, 500nm technology.

Etching off metals:

Mon, 17 Nov 14 07:49:41 +0300
<![CDATA[DIP 10Mhz Quartz oscillator based on Seiko NPC HA5022A3 : weekend die-shot]]> http://zeptobars.ru/en/read/Seiko-NPC-HA5022A3-quartz-oscillator-dip Die size 976x770 µm.

Quartz crystal is mounted on springs - in order to reduce impact of vibration on oscillation stability and to make it's damage less likely:

There is an oscillator IC soldered on the ceramic PCB, as well as 0.01uF power supply decoupling cap. It seems we need to go deeper:

Mon, 10 Nov 14 05:32:28 +0300
<![CDATA[NXP PMST3904 - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/NXP-PMST3904-NPN-BJT

Tue, 04 Nov 14 13:27:47 +0300
<![CDATA[BFR93 - BJT RF transistor : weekend die-shot]]> http://zeptobars.ru/en/read/BFR93-bjt-bipolar-RF-npn-transistor Die size 265x264 µm. Transistor itself occupy only small part of the die - it is impractical to cut smaller die, it is already almost a silicon cube:

Sat, 01 Nov 14 01:06:50 +0300
<![CDATA[10Mhz Quartz SMD oscillator based on Seiko NPC SM5009 : weekend die-shot]]> http://zeptobars.ru/en/read/active-smd-10mhz-seiko-npc-SM5009-CF5009AL2-CETECJ
Die size 1194x897 µm, 800nm technology.

Mon, 27 Oct 14 07:59:34 +0300
<![CDATA[OnSemi MMBT2222A - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/OnSemi-MMBT2222A-MMBT2222AL1G-npn-bjt-transistor

Die size 343x343 µm. Comparing to NXP BC847B die area is 1.5x larger (0.118 vs 0.076mm²), but maximum continuous collector current is 6 times higher (600mA vs 100mA, SOT-23 in both cases). This huge increase in current per transistor area is achieved by shunting thin (=high-resistance) base layer with metal. High resistance of base layer is the limiting factor for maximum collector current in BC847B.]]>
Mon, 20 Oct 14 16:42:31 +0400